High performance, long wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Artikel i vetenskaplig tidskrift, 2007

High-quality 1.2 µm InGaAs/GaAs single and triple quantum well lasers grown by molecular beam epitaxy are demonstrated. For the triple quantum well, a record low threshold current density of 107 A/cm2/well is achieved for a 100 x 1000 µm laser.