Very Low Threshold Current Density 1.292 µm GaInNAs Triple Quantum Well Lasers
Journal article, 2008

Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers emitting at 1.29m are demonstrated. The laser structure was grown by molecular beam epitaxy after extensive optimisations of growth and in situ annealing conditions. As-cleaved broad-area lasers with a cavity length of 1mm under pulsed operation showed a record low-threshold current density of 400A/cm2 (∼130A/cm2/QW), a high differential efficiency of 0.32W/A/facet and a characteristic temperature of 94K in the temperature range 10 to 110°C. © The Institution of Engineering and Technology 2008.

Author

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Göran Adolfsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Electronics Letters

0013-5194 (ISSN) 1350-911X (eISSN)

Vol. 44 7 475-477

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

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Created

10/7/2017