Very Low Threshold Current Density 1.292 µm GaInNAs Triple Quantum Well Lasers
Artikel i vetenskaplig tidskrift, 2008

Very-low-threshold Ga0.62In0.38N 0.007As0.993/GaN0.011As0.989/GaAs triple quantum well (QW) lasers emitting at 1.29m are demonstrated. The laser structure was grown by molecular beam epitaxy after extensive optimisations of growth and in situ annealing conditions. As-cleaved broad-area lasers with a cavity length of 1mm under pulsed operation showed a record low-threshold current density of 400A/cm2 (∼130A/cm2/QW), a high differential efficiency of 0.32W/A/facet and a characteristic temperature of 94K in the temperature range 10 to 110°C. © The Institution of Engineering and Technology 2008.

Författare

Huan Zhao Ternehäll

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Göran Adolfsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Electronics Letters

0013-5194 (ISSN) 1350-911X (eISSN)

Vol. 44 475-477

Ämneskategorier

Elektroteknik och elektronik