Yongqiang Wei

Visar 45 publikationer

2010

1.3 µm Dilute Nitride Edge Emitting Lasers on GaAs

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
E-MRS Spring Meeting 2010, Strasbourg, France, June 7-10, 2010 (invited)
Paper i proceeding
2009

10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm

Mihail Dumitrescu, M. Wolf, K Schultz et al
2009 Conference on Optical Fiber Communication, OFC 2009; San Diego, CA; United States; 22 March 2009 through 26 March 2009
Paper i proceeding
2009

1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Journal of Crystal Growth. Vol. 311, p. 1863-1867
Artikel i vetenskaplig tidskrift
2009

Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
Microelectronics Journal. Vol. 40, p. 386-391
Artikel i vetenskaplig tidskrift
2008

Thermal performance investigation of DQW GaInNAs laser diodes

J.J. Lim, R. MacKenzie, S. Sujecki et al
Optical and Quantum Electronics. Vol. 40 (5-6), p. 385-390
Artikel i vetenskaplig tidskrift
2008

1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
15th International Conference on Molecular Beam Epitaxy
Paper i proceeding
2008

Dilute Nitrides and 1.3 µm GaInNAs/GaAs Quantum Well Lasers on GaAs (invited paper)

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
Workshop on Recent Advances in Low Dimensional Structures and Devices (WRA-LDSD)
Paper i proceeding
2008

High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6909, p. 690905-
Paper i proceeding
2007

GaAs based 1.3 µm quantum well lasers grown by molecular beam epitaxy

Shu Min Wang, Yongqiang Wei, Ivar Tangring et al
MBE China 2007, Nanchang, China, October 2007 (invited)
Paper i proceeding
2007

High performance 1.3 µm dilute nitride edge emitting lasers

Mihail Dumitrescu, Anders Larsson, Yongqiang Wei et al
Proc. IEEE Annual International Semiconductor Conference, October 2007, Romania
Artikel i vetenskaplig tidskrift
2007

Optical properties of GaInNAs/GaAs quantum well structures

Qing Xiang Zhao, Magnus Willander, Shu Min Wang et al
Thin Solid Films. Vol. 515, p. 4423-
Artikel i vetenskaplig tidskrift
2007

Molecular beam epitaxial growth of highly strained long wavelength multiple quantum-well InGaAs/GaAs lasers with low threshold current density

Göran Adolfsson, Yongqiang Wei, Shu Min Wang et al
14th European Molecular Beam Epitaxy Workshop, Sierra Nevada, Spain
Poster (konferens)
2007

Simulation of DQW GaInNAs laser diodes

J.J. Lim, R. MacKenzie, S. Sujecki et al
IET Optoelectronics. Vol. 1, p. 259-
Artikel i vetenskaplig tidskrift
2007

Electrical, optical and thermal simulation of DQW GaInNAs laser diodes

Jun Lim, R. MacKenzie, S. Sujecki et al
Semiconductor and Integrated Optoelectronics Conference, Cardiff, Wales, UK, April 2007
Paper i proceeding
2007

State-of-the-art GaInNAs quantum wells and 1.3 µm lasers grown by molecular beam epitaxy

Shu Min Wang, Yongqiang Wei, Qing Xiang Zhao et al
the 14th European Molecular Beam Epitaxy Workshop, Sierra Nevada, Spain, 2007 (keynote invited talk)
Paper i proceeding
2006

Uncooled 2.5 Gb/s Operation of 1.3 mm GaInNAs Double Quantum Well Lasers up to 110 oC

Yongqiang Wei, Johan Gustavsson
CLEO-/QELS 2006, Long Beach, California, USA, May 21-26, 2006
Paper i proceeding
2006

The FAST ACCESS project: Low cost 1.3 µm sources for FAST ACCESS technologies

Eric Larkins, Jun Lim, Tom Foxon et al
Workshop on GaInNAs: Materials, devices, and technology
Paper i proceeding
2006

Uncooled 10 Gb/s directly modulated 1.3 mm GaInNAs DQW Lasers up to 110 oC

Johan Gustavsson, Yongqiang Wei
ISLC 2006, Sep. 17-21, Hawaii, USA
Paper i proceeding
2006

Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers

Ying Fu, Yongqiang Wei, X. D. Wang et al
Journal of Applied Physics. Vol. 100 (7)
Artikel i vetenskaplig tidskrift
2006

1. Uncooled 2.5 Gb/s operation of 1.3 mm GaInNAs Double Quantum Well Lasers with low threshold current and high characteristic temperature

Yongqiang Wei
Optics Express. Vol. 14, p. 2753-2758
Artikel i vetenskaplig tidskrift
2006

High Frequency Modulation and Bandwidth Limitations of GaInNAs Double Quantum Well Lasers

Yongqiang Wei, Johan Gustavsson, Åsa Haglund
Applied Physics Letters. Vol. 88, p. 051103-
Artikel i vetenskaplig tidskrift
2006

From Dilute Nitrides to Alloy Nitrides: Nitrogen Incorporation in GaNAs and GaInNAs

Shu Min Wang, Qing Xiang Zhao, Yongqiang Wei et al
WOCSDICE 2006
Paper i proceeding
2006

High performance 1.3 mm GaInNAs Quantum Well Laser on GaAs

Yongqiang Wei, Shu Min Wang
GaInNAs Symposium-material and devices, Cardiff, England
Paper i proceeding
2006

10 Gb/s modulation of 1.3 µm GaInNAs lasers up to 110 degr.C

Johan Gustavsson, Yongqiang Wei, Mahdad Sadeghi et al
IEE Electronics Letters. Vol. 42 (16), p. 925-926
Artikel i vetenskaplig tidskrift
2006

Dynamics and temperature dependence of 1.3 µm GaInNAs DQW lasers

Yongqiang Wei, Johan Gustavsson
Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Fiskebäckskil, Sweden, May 2006
Paper i proceeding
2006

Dynamics and temperature-dependence of 1.3-μm GaInNAs double quantum-well lasers

Yongqiang Wei, Johan Gustavsson, Mahdad Sadeghi et al
IEEE Journal of Quantum Electronics. Vol. 42 (12), p. 1274-1280
Artikel i vetenskaplig tidskrift
2005

6. Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

Yongqiang Wei, Ying Fu, Xiaodong Wang et al
APPLIED PHYSICS LETTERS. Vol. 87 (8), p. 081102-
Artikel i övriga tidskrifter
2005

12. Long-Wavelength InGaAs/GaAs Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Yongqiang Wei, Shu Min Wang, Xiaodong Wang et al
JOURNAL OF CRYSTAL GROWTH. Vol. 278, p. 747-
Artikel i övriga tidskrifter
2005

Explanation of unusual photoluminescence behavior from InAs quantum dots with InAlAs capping

Z. Yu, Yongqiang Wei
Journal of Materials Science and Technology. Vol. 21 (4), p. 559-562
Artikel i vetenskaplig tidskrift
2005

2. High performance 1.28 mm GaInNAs Double Quantum Well lasers

Yongqiang Wei, Mahdad Sadeghi, Shu Min Wang et al
ELECTRONICS LETTERS. Vol. 41 (24), p. 1328-
Artikel i övriga tidskrifter
2005

High quality GaNAs qunatum wells with room temperature light emission up to 1.44 µm

Shu Min Wang, Qinfen Gu, Yongqiang Wei et al
Applied Physics Letters. Vol. 87, p. 141913-
Artikel i vetenskaplig tidskrift
2005

High Frequency Modulation and Bandwidth Limitations of GaInNAs Double Quantum Well Lasers

Yongqiang Wei, Anders Larsson, Johan Gustavsson et al
14th European Semiconductor Laser Workshop,Glasgow, UK
Paper i proceeding
2005

Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

Yongqiang Wei, Ying Fu, Xiaodong Wang et al
CLEO-/EUROPE-EQEC 2005, Muchen, Germany
Paper i proceeding
2005

Very low threshold current density of 1.3 µm GaInNAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy

Shu Min Wang, Yongqiang Wei, Xiaodong Wang et al
Journal of Crystal Growth. Vol. 278, p. 734-
Artikel i vetenskaplig tidskrift
2004

1.3-1.55 um light emission from InGaAs/GaAs quantum wells on GaAs using dipole delta-doping

Shu Min Wang, Qing Xiang Zhao, Xia Dong Wang et al
IPRM04, Kagoshima, Japan, May 31 - June 4, 2004
Paper i proceeding
2004

Long wavelenght InGaAs/GaAs quantum well lasers grown by molecular beam epitaxy

Yongqiang Wei, Shu Min Wang, Xia Dong Wang et al
13th International Conference on Molecular Beam Epitaxy, Edinburgh, UK, August 22-27, 2004
Paper i proceeding
2004

Very low threshold current density of 1.3 um GaInNAs single quantum well lasers grown by molecular beam epitaxy

Shu Min Wang, Yongqiang Wei, Xia Dong Wang et al
13th International Conference on Molecular Beam Epitaxy, Edinburgh, UK, August 22-27, 2004
Paper i proceeding
2004

High-quality 1.3 um GalnNAs single quantum well lasers grown by MBE

Shu Min Wang, S.M Wang, Yongqiang Wei et al
Electronics Letter. Vol. 40, p. 1338-
Artikel i vetenskaplig tidskrift
2004

Wavelenght extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole delta-doping

Xiao Dong Wang, Shu Min Wang, Yongqiang Wei et al
IPRM04, Kagoshime, Japan, May 31 - June 4, 2004
Paper i proceeding
2004

1.3 to 1.5 um light emission from InGaAs/GaAs quantum wells

Shu Min Wang, Qing Xiang Zhao, Yongqiang Wei et al
Applied Physics Letter. Vol. 85, p. 875-
Artikel i vetenskaplig tidskrift
2004

GaAs-Based Novel Gain Materials for 1.3 um Lasers

Yongqiang Wei
Licentiatavhandling
2003

Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy

Fariba Ferdos, Shu Min Wang, Yongqiang Wei et al
Journal of Crystal Growth. Vol. 251 (1-4), p. 145-9
Artikel i vetenskaplig tidskrift
2002

Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy

Fariba Ferdos, Shu Min Wang, Yongqiang Wei et al
International Conference on Molecular Beam Epitaxy, 2002, p. 285-6
Paper i proceeding
2002

Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots

Fariba Ferdos, Shu Min Wang, Yongqiang Wei et al
Applied Physics Letters. Vol. 81 (7), p. 1195-7
Artikel i vetenskaplig tidskrift

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