Yongqiang Wei

1.3 µm Dilute Nitride Edge Emitting Lasers on GaAs

10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm

Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs

1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy

High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Thermal performance investigation of DQW GaInNAs laser diodes

1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)

Dilute Nitrides and 1.3 µm GaInNAs/GaAs Quantum Well Lasers on GaAs (invited paper)

Molecular beam epitaxial growth of highly strained long wavelength multiple quantum-well InGaAs/GaAs lasers with low threshold current density

Simulation of DQW GaInNAs laser diodes

GaAs based 1.3 µm quantum well lasers grown by molecular beam epitaxy

Optical properties of GaInNAs/GaAs quantum well structures

Electrical, optical and thermal simulation of DQW GaInNAs laser diodes

State-of-the-art GaInNAs quantum wells and 1.3 µm lasers grown by molecular beam epitaxy

High performance 1.3 µm dilute nitride edge emitting lasers

Uncooled 2.5 Gb/s Operation of 1.3 mm GaInNAs Double Quantum Well Lasers up to 110 oC

High performance 1.3 mm GaInNAs Quantum Well Laser on GaAs

10 Gb/s modulation of 1.3 µm GaInNAs lasers up to 110 degr.C

Uncooled 10 Gb/s directly modulated 1.3 mm GaInNAs DQW Lasers up to 110 oC

Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers

Dynamics and temperature-dependence of 1.3-μm GaInNAs double quantum-well lasers

Efficient 1.3 mm GaInNAs Quantum Well Lasers for Uncooled, High Speed Operation

The FAST ACCESS project: Low cost 1.3 µm sources for FAST ACCESS technologies

From Dilute Nitrides to Alloy Nitrides: Nitrogen Incorporation in GaNAs and GaInNAs

1. Uncooled 2.5 Gb/s operation of 1.3 mm GaInNAs Double Quantum Well Lasers with low threshold current and high characteristic temperature

Dynamics and temperature dependence of 1.3 µm GaInNAs DQW lasers

High Frequency Modulation and Bandwidth Limitations of GaInNAs Double Quantum Well Lasers

2. High performance 1.28 mm GaInNAs Double Quantum Well lasers

12. Long-Wavelength InGaAs/GaAs Quantum-Well Lasers Grown by Molecular Beam Epitaxy

High Frequency Modulation and Bandwidth Limitations of GaInNAs Double Quantum Well Lasers

Explanation of unusual photoluminescence behavior from InAs quantum dots with InAlAs capping

Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

High quality GaNAs qunatum wells with room temperature light emission up to 1.44 µm

Very low threshold current density of 1.3 µm GaInNAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy

6. Direct Comparison of Threshold and Gain Characteristics of 1300 nm GaInNAs lasers with GaNAs and GaAs Barriers

Long wavelenght InGaAs/GaAs quantum well lasers grown by molecular beam epitaxy

Very low threshold current density of 1.3 um GaInNAs single quantum well lasers grown by molecular beam epitaxy

High-quality 1.3 um GalnNAs single quantum well lasers grown by MBE

Wavelenght extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole delta-doping

GaAs-Based Novel Gain Materials for 1.3 um Lasers

1.3-1.55 um light emission from InGaAs/GaAs quantum wells on GaAs using dipole delta-doping

1.3 to 1.5 um light emission from InGaAs/GaAs quantum wells

Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy

Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy

Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots