Yongqiang Wei
Showing 45 publications
1.3 µm Dilute Nitride Edge Emitting Lasers on GaAs
10 Gb/s uncooled dilute nitride optical transmitters operating at 1300 nm
Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs
1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy
High Performance 1.3 μm GaInNAs Quantum Well Lasers on GaAs
Thermal performance investigation of DQW GaInNAs laser diodes
1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)
Dilute Nitrides and 1.3 µm GaInNAs/GaAs Quantum Well Lasers on GaAs (invited paper)
Simulation of DQW GaInNAs laser diodes
GaAs based 1.3 µm quantum well lasers grown by molecular beam epitaxy
Optical properties of GaInNAs/GaAs quantum well structures
Electrical, optical and thermal simulation of DQW GaInNAs laser diodes
High performance 1.3 µm dilute nitride edge emitting lasers
State-of-the-art GaInNAs quantum wells and 1.3 µm lasers grown by molecular beam epitaxy
Uncooled 2.5 Gb/s Operation of 1.3 mm GaInNAs Double Quantum Well Lasers up to 110 oC
High performance 1.3 mm GaInNAs Quantum Well Laser on GaAs
10 Gb/s modulation of 1.3 µm GaInNAs lasers up to 110 degr.C
Uncooled 10 Gb/s directly modulated 1.3 mm GaInNAs DQW Lasers up to 110 oC
Dynamics and temperature-dependence of 1.3-μm GaInNAs double quantum-well lasers
Efficient 1.3 mm GaInNAs Quantum Well Lasers for Uncooled, High Speed Operation
From Dilute Nitrides to Alloy Nitrides: Nitrogen Incorporation in GaNAs and GaInNAs
High Frequency Modulation and Bandwidth Limitations of GaInNAs Double Quantum Well Lasers
The FAST ACCESS project: Low cost 1.3 µm sources for FAST ACCESS technologies
Dynamics and temperature dependence of 1.3 µm GaInNAs DQW lasers
2. High performance 1.28 mm GaInNAs Double Quantum Well lasers
12. Long-Wavelength InGaAs/GaAs Quantum-Well Lasers Grown by Molecular Beam Epitaxy
High Frequency Modulation and Bandwidth Limitations of GaInNAs Double Quantum Well Lasers
High quality GaNAs qunatum wells with room temperature light emission up to 1.44 µm
Explanation of unusual photoluminescence behavior from InAs quantum dots with InAlAs capping
Long wavelenght InGaAs/GaAs quantum well lasers grown by molecular beam epitaxy
High-quality 1.3 um GalnNAs single quantum well lasers grown by MBE
Wavelenght extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole delta-doping
1.3 to 1.5 um light emission from InGaAs/GaAs quantum wells
1.3-1.55 um light emission from InGaAs/GaAs quantum wells on GaAs using dipole delta-doping
Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy
Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots
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