Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy
Journal article, 2003
Capping of InAs quantum dots (QDs) with AlAs or GaAs causes a significant change in the structural properties of the QDs. However, there is a basic difference between these two capping materials. The GaAs capping causes a dramatic reduction of the dot density and height. AlAs capping, on the other hand, results in a partly suppressed height reduction and a higher dot density.
aluminium compounds
indium compounds
semiconductor quantum dots
III-V semiconductors
semiconductor epitaxial layers
molecular beam epitaxial growth
semiconductor growth
gallium arsenide
Author
Fariba Ferdos
Department of Microelectronics
Shu Min Wang
Department of Microelectronics
Yongqiang Wei
Department of Microelectronics
Mahdad Sadeghi
Engineering and Industrial Design, MC2 Process Laboratory
Qing Xiang Zhao
Chalmers, Physical Electronics and Photonics
Anders Larsson
Department of Microelectronics
Journal of Crystal Growth
0022-0248 (ISSN)
Vol. 251 1-4 145-9Subject Categories
Telecommunications
Condensed Matter Physics
DOI
10.1016/S0022-0248(02)02471-5