Qing Xiang Zhao

Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs

1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy

Growth and Characterization of GaInNAs by Molecular Beam Epitaxy Using a Nitrogen Irradiation Method

Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide

ZnO nanowires: chemical growth, electrodeposition, and application to intracellular nano-sensors

1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)

Fundamentals and properties of zinc oxide nanostructures: optical and sensing applications

Buckling and mechanical instability of ZnO nanorods grown on different substrates under uniaxial compression

Comparison of Optical and Structural Quality of GaIn(N)As Analog and Digital Quantum Wells Grown by Molecular Beam Epitaxy

Hydrothermally grown singlecrystalline zinc oxide; characterization and modification

Light-emitting diodes based on n-ZnO nano-wires and p-type organic semiconductors

Light emission from different zinc oxide junctions and nanostructures

Optical properties of GaInNAs/GaAs quantum well structures

State-of-the-art GaInNAs quantum wells and 1.3 µm lasers grown by molecular beam epitaxy

Excitonic effects in ZnO nanowires and hollow nanotubes

Growth of ZnO nanostructures by vapor-liquid-solid method

Identification of oxygen and zinc vacancy optical signals in ZnO

Ultraviolet driven negative current and rectifier effect in self-assembled green fluorescent protein device

Synthesis and structural and optical properties of ZnO micro- and nanostructures grown by the vapour–liquid–solid method

From Dilute Nitrides to Alloy Nitrides: Nitrogen Incorporation in GaNAs and GaInNAs

Nitrogen Incorporation in GaNAs Layers Grown by Molecular Beam Epitaxy

Synthesis and characterization of ZnO nanostructures grown on Si substrates

A novel photoluminescence transition influenced by O implantation in ZnO bulk

Carrier spin dynamics in modulation-doped InAs/GaAs quantum dots

Photoluminescence property of InAs quantum dots with InxGa1-x as layer inserted

Recent progress in growth and devices based on Zinc Oxide nanostructures

Some silicon-based heterostructures for optical applications

Spin relaxation in charged InAs/GaAs quantum dots

12. Long-Wavelength InGaAs/GaAs Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Boundary conditions for electron tunneling in complex two- and three-dimensional structures

Effects of nitrogen incorporation on the properties of GaInNAs quantum well structures

Solid and soft nanostructured materials: fundamentals and applications

Growth and characterization of ZnO nanostructures

Effects of growth temperature and post-growth thermal annealing on carrier localization and deep level emission in GaNAs/GaAs quantum well structures

High quality GaNAs qunatum wells with room temperature light emission up to 1.44 µm

Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization

Deep-level emissions influenced by O and Zn implantations in ZnO

Carrier dynamics in modulation-doped InAs GaAs quantum dots

Long wavelenght InGaAs/GaAs quantum well lasers grown by molecular beam epitaxy

Wavelenght extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole delta-doping

1.3-1.55 um light emission from InGaAs/GaAs quantum wells on GaAs using dipole delta-doping

Application of combinatorial material chip method on the improvement of quantum dots emission efficiency

1.3 to 1.5 um light emission from InGaAs/GaAs quantum wells

Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy

Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy

Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots

Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 μm luminescence