Qing Xiang Zhao

Visar 47 publikationer

2009

1.3 µm GaInNAs Edge Emitting Lasers Grown by Molecular Beam Epitaxy

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Journal of Crystal Growth. Vol. 311, p. 1863-1867
Artikel i vetenskaplig tidskrift
2009

Growth and Characterization of GaInNAs by Molecular Beam Epitaxy Using a Nitrogen Irradiation Method

Huan Zhao Ternehäll, Shu Min Wang, Qing Xiang Zhao et al
Journal of Crystal Growth. Vol. 311 (7), p. 1723-1727
Artikel i vetenskaplig tidskrift
2009

Dilute Nitrides and 1.3 μm GaInNAs Quantum Well Lasers on GaAs

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
Microelectronics Journal. Vol. 40, p. 386-391
Artikel i vetenskaplig tidskrift
2008

1.3 µm GaInNAs Edge Emitting Lasers on GaAs Grown by Molecular Beam Epitaxy (invited paper)

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
15th International Conference on Molecular Beam Epitaxy
Paper i proceeding
2008

Buckling and mechanical instability of ZnO nanorods grown on different substrates under uniaxial compression

M Riaz, A Fulati, Qing Xiang Zhao et al
Nanotechnology. Vol. 19 (41), p. 415708-
Artikel i vetenskaplig tidskrift
2008

Light-emitting diodes based on n-ZnO nano-wires and p-type organic semiconductors

Magnus Willander, A Wadeasa, Peter Klason et al
Proceedings of the SPIE - The International Society for Optical Engineering. Vol. 6895, p. 68950O-1-10-
Paper i proceeding
2008

Fundamentals and properties of zinc oxide nanostructures: optical and sensing applications

Magnus Willander, Qing Xiang Zhao, Qiuhong Hu et al
Superlattices and Microstructures. Vol. 43 (4), p. 352-61
Artikel i vetenskaplig tidskrift
2008

Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide

Peter Klason, Thomas Moe Börseth, Qing Xiang Zhao et al
Solid State Communications. Vol. 145 (5-6), p. 321-6
Artikel i vetenskaplig tidskrift
2008

ZnO nanowires: chemical growth, electrodeposition, and application to intracellular nano-sensors

Magnus Willander, Peter Klason, L. Yang et al
PHYSICA STATUS SOLIDI C. Vol. 5 (9), p. 3076-3083
Artikel i vetenskaplig tidskrift
2008

Comparison of Optical and Structural Quality of GaIn(N)As Analog and Digital Quantum Wells Grown by Molecular Beam Epitaxy

Huan Zhao Ternehäll, Shu Min Wang, Qing Xiang Zhao et al
Semiconductor Science and Technology. Vol. 23 (12), p. Art nr. 125002-
Artikel i vetenskaplig tidskrift
2008

Hydrothermally grown singlecrystalline zinc oxide; characterization and modification

B. G. Svensson, Thomas Moe Börseth, K.M Joansen et al
Procc. MRS
Paper i proceeding
2008

Light emission from different zinc oxide junctions and nanostructures

Magnus Willander, Yu. E. Lozovik, A Wadeasa et al
Procc. ICOOPM
Paper i proceeding
2007

Optical properties of GaInNAs/GaAs quantum well structures

Qing Xiang Zhao, Magnus Willander, Shu Min Wang et al
Thin Solid Films. Vol. 515, p. 4423-
Artikel i vetenskaplig tidskrift
2007

Growth of ZnO nanostructures by vapor-liquid-solid method

Qing Xiang Zhao, Peter Klason, Magnus Willander
Applied Physics A: Materials Science and Processing. Vol. 88 (1), p. 27-30
Artikel i vetenskaplig tidskrift
2007

State-of-the-art GaInNAs quantum wells and 1.3 µm lasers grown by molecular beam epitaxy

Shu Min Wang, Yongqiang Wei, Qing Xiang Zhao et al
the 14th European Molecular Beam Epitaxy Workshop, Sierra Nevada, Spain, 2007 (keynote invited talk)
Paper i proceeding
2007

Excitonic effects in ZnO nanowires and hollow nanotubes

Magnus Willander, Yu. E. Lozovik, Qing Xiang Zhao et al
Proc. SPIE - Int. Soc. Opt. Eng.. Vol. 6486, p. 648614-1-1-
Paper i proceeding
2006

Identification of oxygen and zinc vacancy optical signals in ZnO

T. Moe Børseth, B. G. Svensson, A. Yu. Kuznetsov et al
Applied Physics Letters. Vol. 89, p. 262112-
Artikel i vetenskaplig tidskrift
2006

Synthesis and characterization of ZnO nanostructures grown on Si substrates

Qing Xiang Zhao, Peter Klason, Magnus Willander et al
Physica Scripta. Vol. T126, p. 131-134
Artikel i vetenskaplig tidskrift
2006

Nitrogen Incorporation in GaNAs Layers Grown by Molecular Beam Epitaxy

Qing Xiang Zhao, Shu Min Wang, Mahdad Sadeghi et al
Applied Physics Letters. Vol. 89 (3), p. 031907-
Artikel i vetenskaplig tidskrift
2006

Carrier spin dynamics in modulation-doped InAs/GaAs quantum dots

S. Marcinkevičius, J. Siegert, Qing Xiang Zhao
Journal of Applied Physics. Vol. 100 (5)
Artikel i vetenskaplig tidskrift
2006

Ultraviolet driven negative current and rectifier effect in self-assembled green fluorescent protein device

Zackary Chiragwandi, K. Gillespie, Qing Xiang Zhao et al
Applied Physics Letters. Vol. 89 (16), p. 162909-
Artikel i vetenskaplig tidskrift
2006

From Dilute Nitrides to Alloy Nitrides: Nitrogen Incorporation in GaNAs and GaInNAs

Shu Min Wang, Qing Xiang Zhao, Yongqiang Wei et al
WOCSDICE 2006
Paper i proceeding
2006

A novel photoluminescence transition influenced by O implantation in ZnO bulk

Hongmei Zhong, Xiaoshuang Chen, L. Z. Sun et al
Chemical Physics Letters. Vol. 421 (1-3), p. 309-311
Artikel i vetenskaplig tidskrift
2006

Synthesis and structural and optical properties of ZnO micro- and nanostructures grown by the vapour–liquid–solid method

Peter Klason, K. Magnusson, Omer Nur et al
Physica Scripta. Vol. T126, p. 53-56
Artikel i vetenskaplig tidskrift
2005

Effects of growth temperature and post-growth thermal annealing on carrier localization and deep level emission in GaNAs/GaAs quantum well structures

Qing Xiang Zhao, Shu Min Wang, Wei Yongqiang et al
Applied Physics Letters. Vol. 86 (12), p. 121910-
Artikel i vetenskaplig tidskrift
2005

Effects of nitrogen incorporation on the properties of GaInNAs quantum well structures

Qing Xiang Zhao, Shu Min Wang, Mahdad Sadeghi et al
Journal of Applied Physics. Vol. 97 (7), p. 073714-
Artikel i vetenskaplig tidskrift
2005

Solid and soft nanostructured materials: fundamentals and applications

Magnus Willander, Omer Nur, Yu. E. Lozovik et al
Microelectronics. Vol. 36 (11), p. 940-949
Artikel i vetenskaplig tidskrift
2005

Recent progress in growth and devices based on Zinc Oxide nanostructures

Magnus Willander, Safaa Al-Hilli, Qing Xiang Zhao et al
Procc. IWPSD
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2005

Deep-level emissions influenced by O and Zn implantations in ZnO

Qing Xiang Zhao, Peter Klason, Magnus Willander et al
Applied Physics Letters. Vol. 87, p. 211912-
Artikel i vetenskaplig tidskrift
2005

Photoluminescence property of InAs quantum dots with InxGa1-x as layer inserted

J. H. Yang, J. Gong, L. L. Yang et al
Kao Teng Hsueh Hsiao Hua Heush Hsueh Pao/ Chemical Journal of Chinese Universities. Vol. 26 (10), p. 1926-1929
Artikel i vetenskaplig tidskrift
2005

12. Long-Wavelength InGaAs/GaAs Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Yongqiang Wei, Shu Min Wang, Xiaodong Wang et al
JOURNAL OF CRYSTAL GROWTH. Vol. 278, p. 747-
Artikel i övriga tidskrifter
2005

Carrier dynamics in modulation-doped InAs GaAs quantum dots

J. Siegert, S. Marcinkevičius, Qing Xiang Zhao
Physical Review B - Condensed Matter and Materials Physics. Vol. 72 (8)
Artikel i vetenskaplig tidskrift
2005

Growth and characterization of ZnO nanostructures

Peter Klason, K. Magnusson, Omer Nur et al
Procc. SEMINANO. Vol. I
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2005

High quality GaNAs qunatum wells with room temperature light emission up to 1.44 µm

Shu Min Wang, Qinfen Gu, Yongqiang Wei et al
Applied Physics Letters. Vol. 87, p. 141913-
Artikel i vetenskaplig tidskrift
2005

Some silicon-based heterostructures for optical applications

Magnus Willander, Qing Xiang Zhao, Omer Nur et al
Journal of Electronic Materials. Vol. 34 (5), p. 515-521
Artikel i vetenskaplig tidskrift
2005

Spin relaxation in charged InAs/GaAs quantum dots

S. Marcinkevičius, Qing Xiang Zhao
Institute of Physics Conference Series. Vol. 184, p. 443-446
Paper i proceeding
2005

Boundary conditions for electron tunneling in complex two- and three-dimensional structures

P.A. Sundqvist, Qing Xiang Zhao, Magnus Willander
Physical Review B - Condensed Matter and Materials Physics. Vol. 72 (16)
Artikel i vetenskaplig tidskrift
2005

Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization

Qing Xiang Zhao, Magnus Willander, Shu Min Wang et al
Physics Letters, Section A: General, Atomic and Solid State Physics. Vol. 341 (1-4), p. 297-
Artikel i vetenskaplig tidskrift
2004

1.3-1.55 um light emission from InGaAs/GaAs quantum wells on GaAs using dipole delta-doping

Shu Min Wang, Qing Xiang Zhao, Xia Dong Wang et al
IPRM04, Kagoshima, Japan, May 31 - June 4, 2004
Paper i proceeding
2004

Long wavelenght InGaAs/GaAs quantum well lasers grown by molecular beam epitaxy

Yongqiang Wei, Shu Min Wang, Xia Dong Wang et al
13th International Conference on Molecular Beam Epitaxy, Edinburgh, UK, August 22-27, 2004
Paper i proceeding
2004

Wavelenght extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole delta-doping

Xiao Dong Wang, Shu Min Wang, Yongqiang Wei et al
IPRM04, Kagoshime, Japan, May 31 - June 4, 2004
Paper i proceeding
2004

Application of combinatorial material chip method on the improvement of quantum dots emission efficiency

W. Lu, Y.L. Li, H. X. Si et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5277 (1), p. 99-108
Paper i proceeding
2004

1.3 to 1.5 um light emission from InGaAs/GaAs quantum wells

Shu Min Wang, Qing Xiang Zhao, Yongqiang Wei et al
Applied Physics Letter. Vol. 85, p. 875-
Artikel i vetenskaplig tidskrift
2003

Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy

Fariba Ferdos, Shu Min Wang, Yongqiang Wei et al
Journal of Crystal Growth. Vol. 251 (1-4), p. 145-9
Artikel i vetenskaplig tidskrift
2002

Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy

Fariba Ferdos, Shu Min Wang, Yongqiang Wei et al
International Conference on Molecular Beam Epitaxy, 2002, p. 285-6
Paper i proceeding
2002

Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots

Fariba Ferdos, Shu Min Wang, Yongqiang Wei et al
Applied Physics Letters. Vol. 81 (7), p. 1195-7
Artikel i vetenskaplig tidskrift
2001

Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 μm luminescence

Fariba Ferdos, Mahdad Sadeghi, Qing Xiang Zhao et al
Journal of Crystal Growth. Vol. 227-228, p. 1140-5
Artikel i vetenskaplig tidskrift

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