Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization
Artikel i vetenskaplig tidskrift, 2005

The radiative recombination in InxGa1−xN0.01As0.99/GaAs quantum well structures exhibiting strong carrier localization was investigated by optical spectroscopy. For In-concentration from 0 to 30%, the results indicate that the degree of carrier localization decreases with increasing In-concentration. At temperatures below 100 K, the mobility edge excitons as well as localized excitons are identified and their transitions energies strongly depend on the excitation intensity. At elevated temperatures the localized excitons become quenched. The temperature dependence of the photoluminescence emission energy shows different behaviors at different excitation intensities.

Författare

Qing Xiang Zhao

Göteborgs universitet

Magnus Willander

Göteborgs universitet

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Physics Letters, Section A: General, Atomic and Solid State Physics

0375-9601 (ISSN)

Vol. 341 1-4 297-

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1016/j.physleta.2005.04.089

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Skapat

2017-10-07