Radiative recombination of localized excitons and mobility edge excitons in GaInNAs/GaAs quantum wells with strong carrier localization
Journal article, 2005

The radiative recombination in InxGa1−xN0.01As0.99/GaAs quantum well structures exhibiting strong carrier localization was investigated by optical spectroscopy. For In-concentration from 0 to 30%, the results indicate that the degree of carrier localization decreases with increasing In-concentration. At temperatures below 100 K, the mobility edge excitons as well as localized excitons are identified and their transitions energies strongly depend on the excitation intensity. At elevated temperatures the localized excitons become quenched. The temperature dependence of the photoluminescence emission energy shows different behaviors at different excitation intensities.

Author

Qing Xiang Zhao

University of Gothenburg

Magnus Willander

University of Gothenburg

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2)

Physics Letters, Section A: General, Atomic and Solid State Physics

0375-9601 (ISSN)

Vol. 341 1-4 297-

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1016/j.physleta.2005.04.089

More information

Created

10/7/2017