Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy
Paper i proceeding, 2002
Self-organised InAs quantum dots (QDs) are used as optical gain material in long wavelength lasers on GaAs. The measured QD height and density are often used as figures of merits, and great efforts have been made to maximise these two parameters to extend the wavelength coverage. In this work, we investigate the influence of initial GaAs and AlAs cap layers on the structural properties of InAs QDs. The study clearly shows that capping of InAs QDs causes a strong modification of not only the QD shape and height but also the QD density
molecular beam epitaxial growth
gallium arsenide
semiconductor quantum dots
indium compounds
atomic force microscopy
aluminium compounds
III-V semiconductors
semiconductor growth
Författare
Fariba Ferdos
Institutionen för mikroelektronik
Shu Min Wang
Institutionen för mikroelektronik
Yongqiang Wei
Institutionen för mikroelektronik
Anders Larsson
Institutionen för mikroelektronik
Mahdad Sadeghi
Institutionen för mikroelektronik och nanovetenskap
Qing Xiang Zhao
Chalmers, Forskargrupp för fysikalisk elektronik och fotonik
International Conference on Molecular Beam Epitaxy, 2002
285-6
Ämneskategorier
Telekommunikation
Den kondenserade materiens fysik
DOI
10.1109/MBE.2002.1037871