Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy
Paper in proceedings, 2002

Self-organised InAs quantum dots (QDs) are used as optical gain material in long wavelength lasers on GaAs. The measured QD height and density are often used as figures of merits, and great efforts have been made to maximise these two parameters to extend the wavelength coverage. In this work, we investigate the influence of initial GaAs and AlAs cap layers on the structural properties of InAs QDs. The study clearly shows that capping of InAs QDs causes a strong modification of not only the QD shape and height but also the QD density

molecular beam epitaxial growth

gallium arsenide

semiconductor quantum dots

indium compounds

atomic force microscopy

aluminium compounds

III-V semiconductors

semiconductor growth

Author

Fariba Ferdos

Department of Microelectronics

Shu Min Wang

Department of Microelectronics

Yongqiang Wei

Department of Microelectronics

Anders Larsson

Department of Microelectronics

Mahdad Sadeghi

Department of Microelectronics and Nanoscience

Qing Xiang Zhao

Chalmers, Physical Electronics and Photonics

International Conference on Molecular Beam Epitaxy, 2002

285-6

Subject Categories

Telecommunications

Condensed Matter Physics

DOI

10.1109/MBE.2002.1037871

More information

Created

10/7/2017