Influence of thin GaAs and AlAs cap layers on the structural properties of InAs quantum dots grown by molecular beam epitaxy
Paper in proceeding, 2002
Self-organised InAs quantum dots (QDs) are used as optical gain material in long wavelength lasers on GaAs. The measured QD height and density are often used as figures of merits, and great efforts have been made to maximise these two parameters to extend the wavelength coverage. In this work, we investigate the influence of initial GaAs and AlAs cap layers on the structural properties of InAs QDs. The study clearly shows that capping of InAs QDs causes a strong modification of not only the QD shape and height but also the QD density
molecular beam epitaxial growth
gallium arsenide
semiconductor quantum dots
indium compounds
atomic force microscopy
aluminium compounds
III-V semiconductors
semiconductor growth
Author
Fariba Ferdos
Department of Microelectronics
Shu Min Wang
Department of Microelectronics
Yongqiang Wei
Department of Microelectronics
Anders Larsson
Department of Microelectronics
Mahdad Sadeghi
Department of Microelectronics and Nanoscience
Qing Xiang Zhao
Chalmers, Physical Electronics and Photonics
International Conference on Molecular Beam Epitaxy, 2002
285-6
Subject Categories
Telecommunications
Condensed Matter Physics
DOI
10.1109/MBE.2002.1037871