Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2003

Capping of InAs quantum dots (QDs) with AlAs or GaAs causes a significant change in the structural properties of the QDs. However, there is a basic difference between these two capping materials. The GaAs capping causes a dramatic reduction of the dot density and height. AlAs capping, on the other hand, results in a partly suppressed height reduction and a higher dot density.

aluminium compounds

indium compounds

semiconductor quantum dots

III-V semiconductors

semiconductor epitaxial layers

molecular beam epitaxial growth

semiconductor growth

gallium arsenide

Författare

Fariba Ferdos

Institutionen för mikroelektronik

Shu Min Wang

Institutionen för mikroelektronik

Yongqiang Wei

Institutionen för mikroelektronik

Mahdad Sadeghi

Maskinkonstruktion och design, MC2 process laboratorium

Qing Xiang Zhao

Chalmers, Forskargrupp för fysikalisk elektronik och fotonik

Anders Larsson

Institutionen för mikroelektronik

Journal of Crystal Growth

0022-0248 (ISSN)

Vol. 251 1-4 145-9

Ämneskategorier

Telekommunikation

Den kondenserade materiens fysik

DOI

10.1016/S0022-0248(02)02471-5