Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2003
Capping of InAs quantum dots (QDs) with AlAs or GaAs causes a significant change in the structural properties of the QDs. However, there is a basic difference between these two capping materials. The GaAs capping causes a dramatic reduction of the dot density and height. AlAs capping, on the other hand, results in a partly suppressed height reduction and a higher dot density.
aluminium compounds
indium compounds
semiconductor quantum dots
III-V semiconductors
semiconductor epitaxial layers
molecular beam epitaxial growth
semiconductor growth
gallium arsenide
Författare
Fariba Ferdos
Institutionen för mikroelektronik
Shu Min Wang
Institutionen för mikroelektronik
Yongqiang Wei
Institutionen för mikroelektronik
Mahdad Sadeghi
Maskinkonstruktion och design, MC2 process laboratorium
Qing Xiang Zhao
Chalmers, Forskargrupp för fysikalisk elektronik och fotonik
Anders Larsson
Institutionen för mikroelektronik
Journal of Crystal Growth
0022-0248 (ISSN)
Vol. 251 1-4 145-9Ämneskategorier
Telekommunikation
Den kondenserade materiens fysik
DOI
10.1016/S0022-0248(02)02471-5