A novel photoluminescence transition influenced by O implantation in ZnO bulk
Artikel i vetenskaplig tidskrift, 2006

The bulk zinc oxide (ZnO) sample implanted O with implantation concentration of 5 × 1019/cm3 was investigated by photoluminescence. A novel transition at emission energy of 3.08 eV at 77 K appears in the O-implanted sample. In order to find the origin of the novel transition, the O-implanted effects on the luminescence of ZnO bulk have been studied by first principle calculations based on the local density approximation. The theoretical results show that the novel transition at emission energy of 3.08 eV is attributed to O-antisite (Ozn) produced by O-implanted procedure.

Författare

Hongmei Zhong

Xiaoshuang Chen

L. Z. Sun

W. Lu

Qing Xiang Zhao

Göteborgs universitet

Magnus Willander

Göteborgs universitet

Chemical Physics Letters

0009-2614 (ISSN)

Vol. 421 1-3 309-311

Ämneskategorier

Fysik

DOI

10.1016/j.cplett.2006.01.050