Deep-level emissions influenced by O and Zn implantations in ZnO
Journal article, 2005

A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1×1017/cm3 and 5×1019/cm3. The samples were thermally treated in an oxygen gas environment after the implantation. The results clearly show the influence of O and Zn implantations on the deep-level emission. By comparing the photoluminescence spectra for the samples with different implantations, we can conclude that the VZn is responsible to the observed deep-level emission. In addition, a novel transition at the emission energy of 3.08 eV at 77 K appears in the O-implanted sample with 5×1019/cm3 implantation concentration. The novel emission is tentatively identified as O-antisite OZn.

Author

Qing Xiang Zhao

University of Gothenburg

Peter Klason

University of Gothenburg

Magnus Willander

University of Gothenburg

H. M. Zhong

W. Lu

J. H. Yang

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 87 211912-

Subject Categories

Physical Sciences

DOI

10.1063/1.2135880

More information

Created

10/10/2017