Effects of growth temperature and post-growth thermal annealing on carrier localization and deep level emission in GaNAs/GaAs quantum well structures
Journal article, 2005

We report results from investigation of the optical properties of GaNAs/GaAs quantum well structures. The structures were grown by molecular-beam epitaxy at different temperatures, and subsequently postgrowth thermal treatments at different temperature were performed. The results show that the carrier localization is smaller in a structure grown at a temperature of 580 °C in comparison with a structure grown at 450 °C. Both structures also show a broaden deep level emission band. Furthermore, the deep level emission band and the carrier localization effect can be removed by thermal annealing at 650 °C in the structure grown at 450 °C. The structure quality and radiative recombination efficiency are significantly improved after annealing. However, annealing under the same condition has a negligible effect on the structure grown at 580 °C.

Author

Qing Xiang Zhao

University of Gothenburg

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Wei Yongqiang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2)

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Magnus Willander

University of Gothenburg

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 86 12 121910-

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1063/1.1891271

More information

Created

10/7/2017