Nitrogen Incorporation in GaNAs Layers Grown by Molecular Beam Epitaxy
Journal article, 2006

GaNAs/GaAs quantum wells with high N concentrations, grown by molecular beam epitaxy, have been investigated by secondary-ion mass spectrometry (SIMS), high resolution x-ray diffraction (XRD), and photoluminescence (PL) measurements. The substitutional N concentration in an 18 nm thick strained GaNAs layer varies from 1.4% to 5.9% when the growth rate is reduced from 1 to 0.2 µm/h. By further reducing the growth rate, more N can be incorporated but relaxation occurs. Both the total N concentration, deduced from SIMS measurements, and the substitutional N concentration, deduced from XRD measurements, increase with reduced growth rate. By comparing the SIMS and XRD results, we found that a large amount of N was not in substitutional position when the substitutional N concentration is high (>4%). The experimental results also show that there is no detectable change of total and substitutional N concentrations, within the instrument resolutions, after rapid thermal annealing at 700 °C for 30 s. However, PL measurements show a strong blueshift of the emission wavelength after annealing and the PL intensity increases by more than one order of magnitude.

Author

Qing Xiang Zhao

University of Gothenburg

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Milan Friesel

University of Gothenburg

Magnus Willander

University of Gothenburg

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 89 3 031907-

Subject Categories

Telecommunications

DOI

10.1063/1.2219133

More information

Created

10/7/2017