Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2015
We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III-V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap.
broad PL spectrum
dilute bismides
InGaPBi
molecular beam epitaxy
Författare
K. Wang
Chinese Academy of Sciences
P. Wang
Chinese Academy of Sciences
W. W. Pan
Chinese Academy of Sciences
X. Y. Wu
Chinese Academy of Sciences
L. Yue
Chinese Academy of Sciences
Q. Gong
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Semiconductor Science and Technology
0268-1242 (ISSN) 1361-6641 (eISSN)
Vol. 30 9 094006Ämneskategorier
Atom- och molekylfysik och optik
DOI
10.1088/0268-1242/30/9/094006