Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2015

We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III-V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap.

broad PL spectrum

dilute bismides

InGaPBi

molecular beam epitaxy

Författare

K. Wang

Chinese Academy of Sciences

P. Wang

Chinese Academy of Sciences

W. W. Pan

Chinese Academy of Sciences

X. Y. Wu

Chinese Academy of Sciences

L. Yue

Chinese Academy of Sciences

Q. Gong

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 30

Ämneskategorier

Atom- och molekylfysik och optik

DOI

10.1088/0268-1242/30/9/094006