Growth of metamorphic InGaP layers on GaAs substrates
Artikel i vetenskaplig tidskrift, 2013

We report on the growth of InGaP metamorphic layer by gas source molecular-beam epitaxy. After optimization of the growth temperatures of the compositionally graded InGaP layer and the indium content in the top metamorphic InGaP layer, almost fully relaxed metamorphic layer was obtained with surface roughness of only about 2.17 nm. Strong photoluminescence signals were measured from both InGaAs quantum well and InAs quantum dots embedded in the metamorphic layer, indicating that the top metamorphic layer had low density of threading dislocations. (c) 2013 Elsevier B.V. All rights reserved.

Stresses

Molecular beam epitaxy

molecular-beam epitaxy

optimization

Phosphides

Semiconducting III-V

materials

Författare

J. Y. Yan

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Q. Gong

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

L. Yue

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Q. B. Liu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

R. H. Cheng

Qufu Normal University

C. F. Cao

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. Wang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Journal of Crystal Growth

0022-0248 (ISSN)

Vol. 378 141-144

Ämneskategorier

Fysik

DOI

10.1016/j.jcrysgro.2012.12.138