Independent determination of In and N concentrations in GaInNAs alloys
Artikel i vetenskaplig tidskrift, 2009

High-resolution x-ray diffraction (HRXRD) and photoreflectance ( PR) spectroscopy were used to independently determine the In and N concentrations in GaInNAs alloys grown by solid-source molecular beam epitaxy (SSMBE). The lattice constant and bandgap energy can be expressed as two independent equations in terms of the In and N concentrations, respectively. The HRXRD measurement provided the lattice constant and the PR measurement extracted the bandgap energy. By simultaneously solving these two equations, we have determined the In and N concentrations with the error as small as 0.001.

Författare

W Lu

University of Nottingham

Jun Lim

University of Nottingham

S. Bull

University of Nottingham

A.V. Andrianov

University of Nottingham

C. Staddon

University of Nottingham

Tom Foxon

University of Nottingham

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Eric Larkins

University of Nottingham

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 24 10 105016-

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1088/0268-1242/24/10/105016

Mer information

Senast uppdaterat

2018-02-28