Independent determination of In and N concentrations in GaInNAs alloys
Journal article, 2009

High-resolution x-ray diffraction (HRXRD) and photoreflectance ( PR) spectroscopy were used to independently determine the In and N concentrations in GaInNAs alloys grown by solid-source molecular beam epitaxy (SSMBE). The lattice constant and bandgap energy can be expressed as two independent equations in terms of the In and N concentrations, respectively. The HRXRD measurement provided the lattice constant and the PR measurement extracted the bandgap energy. By simultaneously solving these two equations, we have determined the In and N concentrations with the error as small as 0.001.

Author

W Lu

University of Nottingham

Jun Lim

University of Nottingham

S. Bull

University of Nottingham

A.V. Andrianov

University of Nottingham

C. Staddon

University of Nottingham

Tom Foxon

University of Nottingham

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Eric Larkins

University of Nottingham

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 24 10 105016-

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1088/0268-1242/24/10/105016

More information

Latest update

2/28/2018