Bismuth incorporation and lattice contraction in GaSbBi and InSbBi
Paper i proceeding, 2011

III-V-Bi compounds have received considerable attention recently due to a number of interesting material properties. For example, adding a small amount of Bi atoms in conventional III-Vs leads to a large bandgap reduction that occurs predominately in the valence band, about 88 meV/%Bi in GaAsBi. The Bi incorporation affects only the valence band structures and has little influence on electrons. Compared with dilute nitrides, the electron mobility of dilute GaAsBi is much less affected and photoluminescence intensity increases with the Bi incorporation. Dilute GaAsBi also introduces a large spin-orbit split and it has been suggested to use this property to suppress Auger recombination for 1.55 μm lasers on GaAs [1]. So far most experimental studies have been focused on growth of GaAsBi [2], but very little on GaSbBi and InSbBi. Here we report growth of dilute GaSbBi and InSbBi using molecular beam epitaxy (MBE). We have optimized growth conditions aiming at achieving maximum Bi incorporation. Surprisingly X-ray diffraction (XRD) revealed lattice contraction in GaSbBi and InSbBi although Bi atoms have a large atomic radius.

Atomic radius

GaAs

Nitrides

Molecular beam epitaxy

Band gap reduction

Photoluminescence intensities

Bismuth compounds

Material property

Experimental studies

Atoms

X ray diffraction

Spin orbits

Molecular beams

Bismuth

Transparent optical networks

Fiber optic networks

Lattice contraction

Dilute nitrides

Auger recombination

Electron mobility

Growth conditions

Författare

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Ivy Saha Roy

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

13th International Conference on Transparent Optical Networks, ICTON 2011, Stockholm, 26-30 June 2011

2162-7339 (eISSN)

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/ICTON.2011.5970830

ISBN

978-145770880-0

Mer information

Senast uppdaterat

2019-07-17