Bismuth incorporation and lattice contraction in GaSbBi and InSbBi
Paper i proceeding, 2011

III-V-Bi compounds have received considerable attention recently due to a number of interesting material properties. For example, adding a small amount of Bi atoms in conventional III-Vs leads to a large bandgap reduction that occurs predominately in the valence band, about 88 meV/%Bi in GaAsBi. The Bi incorporation affects only the valence band structures and has little influence on electrons. Compared with dilute nitrides, the electron mobility of dilute GaAsBi is much less affected and photoluminescence intensity increases with the Bi incorporation. Dilute GaAsBi also introduces a large spin-orbit split and it has been suggested to use this property to suppress Auger recombination for 1.55 μm lasers on GaAs [1]. So far most experimental studies have been focused on growth of GaAsBi [2], but very little on GaSbBi and InSbBi. Here we report growth of dilute GaSbBi and InSbBi using molecular beam epitaxy (MBE). We have optimized growth conditions aiming at achieving maximum Bi incorporation. Surprisingly X-ray diffraction (XRD) revealed lattice contraction in GaSbBi and InSbBi although Bi atoms have a large atomic radius.

Bismuth compounds

Photoluminescence intensities

Auger recombination

Spin orbits

Atomic radius

Molecular beams

Fiber optic networks


Electron mobility

Experimental studies

Material property

Molecular beam epitaxy


Growth conditions

X ray diffraction


Band gap reduction


Lattice contraction

Transparent optical networks

Dilute nitrides


Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Ivy Saha Roy

Chalmers University of Technology

13th International Conference on Transparent Optical Networks, ICTON 2011, Stockholm, 26-30 June 2011

2162-7339 (eISSN)


Elektroteknik och elektronik