Bismuth incorporation and lattice contraction in GaSbBi and InSbBi
Paper i proceeding, 2011
III-V-Bi compounds have received considerable attention recently due to a number of interesting material properties. For example, adding a small amount of Bi atoms in conventional III-Vs leads to a large bandgap reduction that occurs predominately in the valence band, about 88 meV/%Bi in GaAsBi. The Bi incorporation affects only the valence band structures and has little influence on electrons. Compared with dilute nitrides, the electron mobility of dilute GaAsBi is much less affected and photoluminescence intensity increases with the Bi incorporation. Dilute GaAsBi also introduces a large spin-orbit split and it has been suggested to use this property to suppress Auger recombination for 1.55 μm lasers on GaAs [1]. So far most experimental studies have been focused on growth of GaAsBi [2], but very little on GaSbBi and InSbBi. Here we report growth of dilute GaSbBi and InSbBi using molecular beam epitaxy (MBE). We have optimized growth conditions aiming at achieving maximum Bi incorporation. Surprisingly X-ray diffraction (XRD) revealed lattice contraction in GaSbBi and InSbBi although Bi atoms have a large atomic radius.
Atomic radius
GaAs
Nitrides
Molecular beam epitaxy
Band gap reduction
Photoluminescence intensities
Bismuth compounds
Material property
Experimental studies
Atoms
X ray diffraction
Spin orbits
Molecular beams
Bismuth
Transparent optical networks
Fiber optic networks
Lattice contraction
Dilute nitrides
Auger recombination
Electron mobility
Growth conditions
Författare
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Yuxin Song
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Ivy Saha Roy
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
13th International Conference on Transparent Optical Networks, ICTON 2011, Stockholm, 26-30 June 2011
2162-7339 (eISSN)
978-145770880-0 (ISBN)
Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/ICTON.2011.5970830
ISBN
978-145770880-0