Bismuth incorporation and lattice contraction in GaSbBi and InSbBi
Paper in proceedings, 2011

III-V-Bi compounds have received considerable attention recently due to a number of interesting material properties. For example, adding a small amount of Bi atoms in conventional III-Vs leads to a large bandgap reduction that occurs predominately in the valence band, about 88 meV/%Bi in GaAsBi. The Bi incorporation affects only the valence band structures and has little influence on electrons. Compared with dilute nitrides, the electron mobility of dilute GaAsBi is much less affected and photoluminescence intensity increases with the Bi incorporation. Dilute GaAsBi also introduces a large spin-orbit split and it has been suggested to use this property to suppress Auger recombination for 1.55 μm lasers on GaAs [1]. So far most experimental studies have been focused on growth of GaAsBi [2], but very little on GaSbBi and InSbBi. Here we report growth of dilute GaSbBi and InSbBi using molecular beam epitaxy (MBE). We have optimized growth conditions aiming at achieving maximum Bi incorporation. Surprisingly X-ray diffraction (XRD) revealed lattice contraction in GaSbBi and InSbBi although Bi atoms have a large atomic radius.

Growth conditions


Band gap reduction

Lattice contraction


Atomic radius

Spin orbits


Bismuth compounds

Electron mobility

Molecular beams


Transparent optical networks

Auger recombination

Dilute nitrides

Fiber optic networks

Photoluminescence intensities

Experimental studies

Material property

X ray diffraction

Molecular beam epitaxy


Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Ivy Saha Roy


13th International Conference on Transparent Optical Networks, ICTON 2011, Stockholm, 26-30 June 2011

2162-7339 (eISSN)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering





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