Yuxin Song

Showing 51 publications

2017

The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering

M. Wiesner, A. Trzaskowska, B. Mroz et al
Scientific Reports. Vol. 7 (1)
Journal article
2017

High-Transparency Al/Bi2Te3 Double-Barrier Heterostructures

luca galletti, Sophie Charpentier, Yuxin Song et al
IEEE Transactions on Applied Superconductivity. Vol. 27 (4)
Journal article
2017

Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator

Sophie Charpentier, luca galletti, Gunta Kunakova et al
Nature Communications. Vol. 8 (1)
Journal article
2015

Raman scattering studies of dilute InP1-xBix alloys reveal unusually strong oscillator strength for Bi-induced modes

W. W. Pan, J.A. Steele, P. Wang et al
Semiconductor Science and Technology. Vol. 30 (9)
Journal article
2015

Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells

Jun Shao, Zhen Qi, Huan Zhao Ternehäll et al
Journal of Applied Physics. Vol. 118 (16), p. 165305-
Journal article
2015

Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy

H. Xu, Yuxin Song, W. W. Pan et al
AIP Advances. Vol. 5 (8)
Journal article
2015

Natural patterning of templates on GaAs by formation of cracks

Yuxin Song, H. Xu, Y. Li et al
AIP Advances. Vol. 5 (6), p. Art Nr 067146-
Journal article
2015

Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy

X. Y. Wu, K. Wang, W. W. Pan et al
Semiconductor Science and Technology. Vol. 30 (9)
Journal article
2014

Phase transition of bismuth telluride thin films grown by MBE

Attila Fülöp, Yuxin Song, Sophie Charpentier et al
Applied Physics Express. Vol. 7 (4), p. Art. no. 045503-
Journal article
2014

Defect studies in MBE grown GaSb1-x Bi x layers

N. Segercrantz, J. Kujala, F. Tuomisto et al
AIP Conference Proceedings. Vol. 1583, p. 174-177
Paper in proceeding
2014

Point defect balance in epitaxial GaSb

N. Segercrantz, J. Slotte, I. Makkonen et al
Applied Physics Letters. Vol. 105 (8), p. art. no. 082113-
Journal article
2014

Effect of buffer design on structural and electrical properties of InAs films grown on GaAs substrates

Huan Zhao Ternehäll, Shu Min Wang, Yuxin Song et al
the 41st international symposium on compound semiconductors, Montepillier, France
Paper in proceeding
2013

High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE

Hong Ye, Mahdad Sadeghi, Yuxin Song et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 10 (5), p. 765-768
Journal article
2013

Dilute bismides for near and mid-infrared applications

Yuxin Song, Yi Gu, Hong Ye et al
International Conference on Transparent Optical Networks
Paper in proceeding
2013

Defect studies in MBE grown GaSbBi layers

Natalie Segercrantz, Jiri Kujala, Filip Tuomisto et al
The 17th European Molecular Beam Epitaxy Workshop (EuroMBE), March 10th-13th, 2013, Levi, Finland
Paper in proceeding
2013

Record high mobility Bi2Te3 thin film grown by MBE

Yuxin Song, S. Charpentier, M. Ekström et al
The 17th European Workshop on Molecular Beam Epitaxy, Levi, Finland, 2013
Paper in proceeding
2013

Molecular beam epitaxy growth of InSb1-xBix thin films

Yuxin Song, Shu Min Wang, Ivy Saha Roy et al
Journal of Crystal Growth. Vol. 378, p. 323-328
Journal article
2013

Dilute Bismides for Mid-IR Applications

Yuxin Song, Yi Gu, Jun Shao et al
Springer Series in Materials Science, p. 1-27
Book chapter
2013

Phase transition of MBE grown Bithmuth Telluride from Bi2T3 to Bi4Te3

A Fülöp, Yuxin Song, Peixiong Shi et al
30the North American Molecular Beam Epitaxy Conference, Banff, Canada, 2013
Paper in proceeding
2013

MBE growth of Bi2Te3 for Thermoelectrics

Yuxin Song, Sophie Charpentier, Attila Fülöp et al
Asia Communications and Photonics Conference, ACP
Paper in proceeding
2013

Defect studies in MBE grown GaSbBi layers

N Segercrantz, J Kujala, F Tuomisto et al
27th International Conference on Defects in Semiconductors 2013, Bologna, Italy, 2013
Paper in proceeding
2013

Novel Dilute Bismides for IR Optoelectronics Applications

Shu Min Wang, Yuxin Song, Kai Wang et al
Asia Communications and Photonics Conference, ACP
Paper in proceeding
2013

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

Yi Gu, Yonggang Zhang, Yuxin Song et al
Chinese Physics B. Vol. 22 (3), p. 037802-
Journal article
2013

Optical properties of InGaAsBi/GaAs quantum wells and InAsBi layer on GaAs substrate

Y Gu, Y.G Zhang, Yuxin Song et al
4th International workshop on Bithmuth-Containing Semiconductors: Growth, Properties and Devices, Arkansas, USA, 2013
Paper in proceeding
2013

Growth optimization, strain compensation and structure design of InAs/GaSb type II superlattice for mid-wavelength infrared imaging

Yuxin Song, Shu Min Wang, Carl Asplund et al
Crystal Structure Theory and Application. Vol. 2, p. 46-
Journal article
2013

Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence

X Chen, Yuxin Song, Liang Zhu et al
Journal of Applied Physics. Vol. 113 (15), p. 153505-153507
Journal article
2012

Light Emission from InGaAs/GaAs Quantum Wells at 1.3 µm Using Bi as Surfactant

Hong Ye, Yuxin Song, Yi Gu et al
E-MRS Spring Meeting 2012, Strasbourg, France, May 14-18, 2012
Paper in proceeding
2012

Growth of GaSb1-xBix by molecular beam epitaxy

Yuxin Song, Shu Min Wang, Ivy Saha Roy et al
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. Vol. 30 (2), p. Art. no. 02B114-
Journal article
2012

Metamorphic Quantum Well Lasers

Yuxin Song, Shu Min Wang, Xiangjun Shang et al
Lattice Engineering: Technology and Applications, p. 283-317
Book chapter
2012

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm

Hong Ye, Yuxin Song, Yi Gu et al
AIP Advances. Vol. 2 (4), p. 042158-
Journal article
2012

Templated Growth of Covalently Bonded Three-Dimensional Carbon Nanotube Networks Originated from Graphene

Yifeng Fu, Björn Carlberg, Niklas Lindahl et al
Advanced Materials. Vol. 24 (12), p. 1576-1581
Journal article
2012

High quality strain-compensated multiple InAs/GaNAs quantum dot layers grown by MBE

Hong Ye, Yuxin Song, Mahdad Sadeghi et al
39th International Symposium on Compound Semiconductors (ISCS2012), Santa Barbara, CA, USA, August 27-30, 2012
Paper in proceeding
2011

Bismuth incorporation and lattice contraction in GaSbBi and InSbBi

Shu Min Wang, Yuxin Song, Ivy Saha Roy
13th International Conference on Transparent Optical Networks, ICTON 2011, Stockholm, 26-30 June 2011
Paper in proceeding
2011

Molecular Beam Epitaxy Growth of GaSbxBi1-x

Yuxin Song, Shu Min Wang, Ivy Saha Roy
28th North American Molecular Beam Epitaxy Conference (NAMBE2011), San Diego, USA (2011).
Paper in proceeding
2011

Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE

Shu Min Wang, Göran Adolfsson, Huan Zhao Ternehäll et al
Physica Status Solidi (B): Basic Research. Vol. 248 (5), p. 1207-1211
Journal article
2011

Growth Optimization for InAs/GaSb T2SL Structures by MBE

Yuxin Song, Shu Min Wang, C. Asplund et al
16th European Molecular Beam Epitaxy Workshop (Euro-MBE2011), Alpe d’Huez , France (2011)
Paper in proceeding
2011

Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE

Yuxin Song, Shu Min Wang, Cao Xiaohui et al
Journal of Crystal Growth. Vol. 323 (1), p. 21-25
Journal article
2011

Molecular Beam Epitaxy Growth of InSbxBi1-x

Yuxin Song, Shu Min Wang
2nd International Workshop on Bismuth-Containing Semiconductors: Theory, Simulation and Experiment, Guildford, UK
Paper in proceeding
2010

Comparative Study of Spacer Layers for InAs Quantum Dot Stacks

T. W. Reenaas, PE Vullum, Yuxin Song et al
Proceeding of Indium Phosphide and Related Materials 2010, Takamatsu, Japan, May 31-June 4 2010
Paper in proceeding
2010

Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers

Yuxin Song, Shu Min Wang, Zonghe Lai et al
Applied Physics Letters. Vol. 97 (9), p. 091903-
Journal article
2010

Threading Dislocation Blocking by Dilute Nitrides in Metamorphic Structures on GaAs Grown by MBE

Yuxin Song, Shu Min Wang, Zonghe Lai et al
16th International Conference on Molecular Beam Epitaxy
Paper in proceeding
2010

1.3 µm Dilute Nitride Edge Emitting Lasers on GaAs

Shu Min Wang, Huan Zhao Ternehäll, Göran Adolfsson et al
E-MRS Spring Meeting 2010, Strasbourg, France, June 7-10, 2010 (invited)
Paper in proceeding
2009

Critical Thickness and Radius for Axial Heterostructure Nanowires Using Finite Element Method

Y. Han, P. F. Lu, Z. Y. Yu et al
Nano Letters. Vol. 9 (5), p. 1921-1925
Journal article
2009

Metamorphic InGaAs Materials and Telecom Lasers

Shu Min Wang, Yuxin Song, Ivar Tangring et al
International Conference on Materials and Advanced Technology (ICMAT) 2009, Singapore, June 28 - July 3, 2009. (invited paper)
Paper in proceeding
2009

Doping influence on structural property of linearly graded composition InGaAs buffer layer grown by MBE

Yuxin Song, Shu Min Wang, Ivar Tångring et al
15th European Molecular Beam Epitaxy Workshop, p. TuP11-
Other conference contribution
2009

A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy

Ivar Tångring, Yuxin Song, Zonghe Lai et al
Journal of Crystal Growth. Vol. 311, p. 1684-
Journal article
2009

Metamorphic InGaAs telecom lasers on GaAs

Ivar Tångring, Yuxin Song, D.H. Wu et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. Proc. SPIE 7230, p. 723003-
Paper in proceeding
2009

Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates

Yuxin Song, Shu Min Wang, Ivar Tångring et al
Journal of Applied Physics. Vol. 106 (12), p. 123531-
Journal article
2008

Influence of Doping on Structural Properties of Graded InGaAs Layers Grown by MBE

Ivar Tångring, Yuxin Song, Shu Min Wang et al
15th International Conference on Molecular Beam Epitaxy
Paper in proceeding

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