Yuxin Song
Showing 51 publications
High-Transparency Al/Bi2Te3 Double-Barrier Heterostructures
Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator
Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy
Natural patterning of templates on GaAs by formation of cracks
Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy
Phase transition of bismuth telluride thin films grown by MBE
Defect studies in MBE grown GaSb1-x Bi x layers
Point defect balance in epitaxial GaSb
High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE
Dilute bismides for near and mid-infrared applications
Defect studies in MBE grown GaSbBi layers
Record high mobility Bi2Te3 thin film grown by MBE
Molecular beam epitaxy growth of InSb1-xBix thin films
Dilute Bismides for Mid-IR Applications
Phase transition of MBE grown Bithmuth Telluride from Bi2T3 to Bi4Te3
MBE growth of Bi2Te3 for Thermoelectrics
Defect studies in MBE grown GaSbBi layers
Novel Dilute Bismides for IR Optoelectronics Applications
Optical properties of InGaAsBi/GaAs quantum wells and InAsBi layer on GaAs substrate
Metamorphic Quantum Well Lasers
Growth of GaSb1-xBix by molecular beam epitaxy
Light Emission from InGaAs/GaAs Quantum Wells at 1.3 µm Using Bi as Surfactant
Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm
High quality strain-compensated multiple InAs/GaNAs quantum dot layers grown by MBE
Growth Optimization for InAs/GaSb T2SL Structures by MBE
Bismuth incorporation and lattice contraction in GaSbBi and InSbBi
Molecular Beam Epitaxy Growth of GaSbxBi1-x
Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE
Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE
Molecular Beam Epitaxy Growth of InSbxBi1-x
Comparative Study of Spacer Layers for InAs Quantum Dot Stacks
Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers
Threading Dislocation Blocking by Dilute Nitrides in Metamorphic Structures on GaAs Grown by MBE
1.3 µm Dilute Nitride Edge Emitting Lasers on GaAs
Critical Thickness and Radius for Axial Heterostructure Nanowires Using Finite Element Method
Metamorphic InGaAs Materials and Telecom Lasers
Metamorphic InGaAs telecom lasers on GaAs
Influence of Doping on Structural Properties of Graded InGaAs Layers Grown by MBE
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