MBE growth of Bi2Te3 for Thermoelectrics
Paper in proceeding, 2013
Molecular beam epitaxy of Bi2Te3 on various substrates for thermoelectric applications is investigated. Growth conditions were optimized based on Si(111) substrates with two different growth techniques, co-deposition followed by crystallization and direct growth. Growth of Bi 2Te3 on GaAs, GaN, et. al. substrates with different crystal directions and offcut angles were investigated. High quality Bi2Te3 thin films were achieved with very low carrier density and record high carrier mobility.
Author
Yuxin Song
Chinese Academy of Sciences
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Sophie Charpentier
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Attila Fülöp
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Maria Ekström
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
luca galletti
University of Naples Federico II
Consiglo Nazionale Delle Richerche
Thilo Bauch
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Floriana Lombardi
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Chinese Academy of Sciences
Asia Communications and Photonics Conference, ACP
2162108x (ISSN)
Asia Communications and Photonics Conference, ACP2013
Beijing, China,
Beijing, China,
Subject Categories
Materials Engineering
DOI
10.1364/acpc.2013.ath4k.1