MBE growth of Bi2Te3 for Thermoelectrics
Paper i proceeding, 2013
Molecular beam epitaxy of Bi2Te3 on various substrates for thermoelectric applications is investigated. Growth conditions were optimized based on Si(111) substrates with two different growth techniques, co-deposition followed by crystallization and direct growth. Growth of Bi 2Te3 on GaAs, GaN, et. al. substrates with different crystal directions and offcut angles were investigated. High quality Bi2Te3 thin films were achieved with very low carrier density and record high carrier mobility.
Författare
Yuxin Song
Chinese Academy of Sciences
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Sophie Charpentier
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Attila Fülöp
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Maria Ekström
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
luca galletti
Universita degli Studi di Napoli Federico II
Consiglo Nazionale Delle Richerche
Thilo Bauch
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Floriana Lombardi
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Chinese Academy of Sciences
Asia Communications and Photonics Conference, ACP
2162108x (ISSN)
Asia Communications and Photonics Conference, ACP2013
Beijing, China,
Beijing, China,
Ämneskategorier
Materialteknik
DOI
10.1364/acpc.2013.ath4k.1