Growth of GaSb1-xBix by molecular beam epitaxy
Journal article, 2012
Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.
bismuth alloys
Rutherford backscattering
silicon alloys
gallium alloys
secondary ion mass spectra
molecular beam epitaxial growth
X-ray diffraction
Author
Yuxin Song
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Ivy Saha Roy
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Peixiong Shi
Anders Hallen
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
21662746 (ISSN) 21662754 (eISSN)
Vol. 30 2 Art. no. 02B114-Areas of Advance
Nanoscience and Nanotechnology
Materials Science
Subject Categories
Telecommunications
Other Materials Engineering
DOI
10.1116/1.3672025