Growth of GaSb1-xBix by molecular beam epitaxy
Journal article, 2012

Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and GaAs substrates were compared and no apparent difference for Bi incorporation was found.

bismuth alloys

Rutherford backscattering

silicon alloys

gallium alloys

secondary ion mass spectra

molecular beam epitaxial growth

X-ray diffraction

Author

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Ivy Saha Roy

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Peixiong Shi

Anders Hallen

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

1071-1023 (ISSN)

Vol. 30 2 Art. no. 02B114-

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Telecommunications

Other Materials Engineering

DOI

10.1116/1.3672025

More information

Created

10/8/2017