Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy
Journal article, 2015
The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions.
InPBi
eep level
hermal tability
hermal annealing
hotoluminescence
ilute bismides
Author
X. Y. Wu
Chinese Academy of Sciences
K. Wang
Chinese Academy of Sciences
W. W. Pan
Chinese Academy of Sciences
P. Wang
Chinese Academy of Sciences
Y. Li
Chinese Academy of Sciences
Yuxin Song
Chinese Academy of Sciences
Yi Gu
Chinese Academy of Sciences
L. Yue
Chinese Academy of Sciences
H. Xu
Chinese Academy of Sciences
Z. Zhang
Chinese Academy of Sciences
J. Cui
Chinese Academy of Sciences
Q. Gong
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Semiconductor Science and Technology
0268-1242 (ISSN) 1361-6641 (eISSN)
Vol. 30 9 094014Subject Categories
Atom and Molecular Physics and Optics
DOI
10.1088/0268-1242/30/9/094014