Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2015

The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions.

ilute bismides

hotoluminescence

InPBi

hermal annealing

hermal tability

eep level

Författare

X. Y. Wu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

K. Wang

Chinese Academy of Sciences

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

W. W. Pan

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

P. Wang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. Li

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Yuxin Song

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Yi Gu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

L. Yue

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

H. Xu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Z. Zhang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

J. Cui

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Q. Gong

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Semiconductor Science and Technology

0268-1242 (ISSN) 1361-6641 (eISSN)

Vol. 30

Ämneskategorier

Atom- och molekylfysik och optik

DOI

10.1088/0268-1242/30/9/094014