Point defect balance in epitaxial GaSb
Journal article, 2014
Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.
Author
N. Segercrantz
Aalto University
J. Slotte
Aalto University
I. Makkonen
Aalto University
J. Kujala
Aalto University
F. Tuomisto
Aalto University
Yuxin Song
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 105 8 art. no. 082113- 082113Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1063/1.4894473