Point defect balance in epitaxial GaSb
Artikel i vetenskaplig tidskrift, 2014

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Författare

N. Segercrantz

Aalto-Yliopisto

J. Slotte

Aalto-Yliopisto

I. Makkonen

Aalto-Yliopisto

J. Kujala

Aalto-Yliopisto

F. Tuomisto

Aalto-Yliopisto

Yuxin Song

Chinese Academy of Sciences

Chalmers

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 105 8 art. no. 082113- 082113

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1063/1.4894473