Novel Dilute Bismides for IR Optoelectronics Applications
Paper in proceeding, 2013
III-V-Bi compounds reveal a number of attractive physical properties promising for novel IR optoelectronic applications [1,2] and have received considerable attention as witnessed by the dedicated international workshops on this topic in the consecutive past four years. The isoelectronic nature of Bi atoms in III-Vs induces strong interactions with the energy bands of host materials leading to large band-gap reduction, less temperature sensitive band-gap and large spin-orbit split band. So far the most studied material is Ga(N)AsBi, while other dilute bismides have also been reported recently. In this paper, we shall briefly review several novel bismides: GaSbBi, InSbiBi, InAsBi, InPBi and InGaAsBi, and the Bi surfactant effect from our group, all grown by molecular beam epitaxy (MBE).
Author
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Yuxin Song
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Kai Wang
Chinese Academy of Sciences
Yi Gu
Chinese Academy of Sciences
Huan Zhao Ternehäll
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
X Chen
Chinese Academy of Sciences
Hong Ye
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Haifei Zhou
Chinese Academy of Sciences
Chuanzheng Kang
Chinese Academy of Sciences
Yaoyao Li
Chinese Academy of Sciences
Cunfang Cao
Chinese Academy of Sciences
Liyao Zhang
Chinese Academy of Sciences
Jun Shao
Chalmers, Microtechnology and Nanoscience (MC2)
Qian Gong
Chinese Academy of Sciences
Yonggang Zhang
Chinese Academy of Sciences
Asia Communications and Photonics Conference, ACP
2162108X (ISSN)
978-155752989-3 (ISBN)
Subject Categories
Materials Engineering
DOI
10.1364/acpc.2013.af3b.5