Novel Dilute Bismides for IR Optoelectronics Applications
Paper in proceedings, 2013

III-V-Bi compounds reveal a number of attractive physical properties promising for novel IR optoelectronic applications [1,2] and have received considerable attention as witnessed by the dedicated international workshops on this topic in the consecutive past four years. The isoelectronic nature of Bi atoms in III-Vs induces strong interactions with the energy bands of host materials leading to large band-gap reduction, less temperature sensitive band-gap and large spin-orbit split band. So far the most studied material is Ga(N)AsBi, while other dilute bismides have also been reported recently. In this paper, we shall briefly review several novel bismides: GaSbBi, InSbiBi, InAsBi, InPBi and InGaAsBi, and the Bi surfactant effect from our group, all grown by molecular beam epitaxy (MBE).

Author

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Kai Wang

Chinese Academy of Sciences

Yi Gu

Chinese Academy of Sciences

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

X Chen

Chinese Academy of Sciences

Hong Ye

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Haifei Zhou

Chinese Academy of Sciences

Chuanzheng Kang

Chinese Academy of Sciences

Yaoyao Li

Chinese Academy of Sciences

Cunfang Cao

Chinese Academy of Sciences

Liyao Zhang

Chinese Academy of Sciences

Jun Shao

Chalmers, Microtechnology and Nanoscience (MC2)

Qian Gong

Chinese Academy of Sciences

Yonggang Zhang

Chinese Academy of Sciences

Asia Communications and Photonics Conference, ACP

2162108X (ISSN)

Subject Categories

Materials Engineering

ISBN

978-155752989-3

More information

Latest update

1/18/2019