Showing 8 publications
Dilute bismides for near and mid-infrared applications
Novel Dilute Bismides for IR Optoelectronics Applications
High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE
Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence
Optical properties of InGaAsBi/GaAs quantum wells and InAsBi layer on GaAs substrate
Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm
High quality strain-compensated multiple InAs/GaNAs quantum dot layers grown by MBE
Light Emission from InGaAs/GaAs Quantum Wells at 1.3 µm Using Bi as Surfactant
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