High quality strain-compensated multiple InAs/AlGaNAs quantum dot layers grown by MBE
Paper in proceedings, 2013

Intermediate band solar cells have attracted significant interest as a possible means of achieving high conversion efficiency. Under optimized growth parameters, we successfully achieve a high density of uniform InAs QDs grown on various matrixes by molecular beam epitaxy. Incorporating N atoms into GaAs and AlGaAs barriers effectively compensates the internal compressive strain and avoids formation of dislocations and defects. The 50 stacking of high density and uniform InAs QDs was demonstrated without detectable dislocations using 26 nm GaNAs as a barrier.

strain compensation

multi-stack

InAs quantum dot

Author

Hong Ye

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Zonghe Lai

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Yi Gu

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Physica Status Solidi (C) Current Topics in Solid State Physics

1862-6351 (ISSN) 1610-1642 (eISSN)

Vol. 10 5 765-768

Subject Categories

Other Engineering and Technologies

Condensed Matter Physics

DOI

10.1002/pssc.201200623

More information

Latest update

5/23/2018