Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence
Journal article, 2013

The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K. The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K. The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth. The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes. The incorporation of bismuth also induces alloy non-uniformity in the quantum well, leading to an increased photoluminescence linewidth.

quantum well

telecom

MBE

GaAsBi

dilute bismide

1.3 mum

Author

Yi Gu

Chinese Academy of Sciences

Yonggang Zhang

Chinese Academy of Sciences

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Hong Ye

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Yuanying Cao

Chinese Academy of Sciences

Aizhen Li

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Chinese Physics B

1674-1056 (ISSN)

Vol. 22 3 037802-

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Materials Engineering

Telecommunications

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1088/1674-1056/22/3/037802

More information

Latest update

5/23/2018