Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence
Artikel i vetenskaplig tidskrift, 2013

The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K. The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K. The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth. The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes. The incorporation of bismuth also induces alloy non-uniformity in the quantum well, leading to an increased photoluminescence linewidth.

quantum well

telecom

MBE

GaAsBi

dilute bismide

1.3 mum

Författare

Yi Gu

Chinese Academy of Sciences

Yonggang Zhang

Chinese Academy of Sciences

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Hong Ye

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Yuanying Cao

Chinese Academy of Sciences

Aizhen Li

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Chinese Physics B

1674-1056 (ISSN)

Vol. 22 3 037802-

Styrkeområden

Nanovetenskap och nanoteknik

Materialvetenskap

Ämneskategorier

Materialteknik

Telekommunikation

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1088/1674-1056/22/3/037802

Mer information

Senast uppdaterat

2018-05-23