Novel Dilute Bismides for IR Optoelectronics Applications
Paper i proceeding, 2013

III-V-Bi compounds reveal a number of attractive physical properties promising for novel IR optoelectronic applications [1,2] and have received considerable attention as witnessed by the dedicated international workshops on this topic in the consecutive past four years. The isoelectronic nature of Bi atoms in III-Vs induces strong interactions with the energy bands of host materials leading to large band-gap reduction, less temperature sensitive band-gap and large spin-orbit split band. So far the most studied material is Ga(N)AsBi, while other dilute bismides have also been reported recently. In this paper, we shall briefly review several novel bismides: GaSbBi, InSbiBi, InAsBi, InPBi and InGaAsBi, and the Bi surfactant effect from our group, all grown by molecular beam epitaxy (MBE).

Författare

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Kai Wang

Chinese Academy of Sciences

Yi Gu

Chinese Academy of Sciences

Huan Zhao Ternehäll

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

X Chen

Chinese Academy of Sciences

Hong Ye

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Haifei Zhou

Chinese Academy of Sciences

Chuanzheng Kang

Chinese Academy of Sciences

Yaoyao Li

Chinese Academy of Sciences

Cunfang Cao

Chinese Academy of Sciences

Liyao Zhang

Chinese Academy of Sciences

Jun Shao

Chalmers

Qian Gong

Chinese Academy of Sciences

Yonggang Zhang

Chinese Academy of Sciences

Asia Communications and Photonics Conference, ACP

2162108X (ISSN)

Ämneskategorier

Materialteknik

ISBN

978-155752989-3