The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering
Journal article, 2017
It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.
Author
M. Wiesner
Adam Mickiewicz University in Poznań
A. Trzaskowska
Adam Mickiewicz University in Poznań
B. Mroz
Adam Mickiewicz University in Poznań
Sophie Charpentier
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
S. Wang
Chinese Academy of Sciences
Yuxin Song
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Floriana Lombardi
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
P. Lucignano
Superconductors, oxides and other innovative materials and devices
University of Naples Federico II
G. Benedek
Donostia International Physics Center
D. Campi
University of Milano-Bicocca
M. Bernasconi
University of Milano-Bicocca
Francisco Guinea
University of Manchester
IMDEA Nanoscience Institute
A. Tagliacozzo
Laboratori Nazionali di Frascati di INFN
Superconductors, oxides and other innovative materials and devices
University of Naples Federico II
Scientific Reports
2045-2322 (ISSN) 20452322 (eISSN)
Vol. 7 1 16449Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)
European Commission (EC) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1038/s41598-017-16313-5