Defect studies in MBE grown GaSb1-x Bi x layers
Paper in proceedings, 2014

Positron annihilation spectroscopy in Doppler broadening mode is used to study epitaxial layers of GaSb 1-x Bi x on undoped GaSb. The samples were grown by Molecular Beam Epitaxy at different temperatures and with different Bi/Sb beam equivalent pressure ratios resulting in Bi concentrations of 0-0.7 %. The results show a relationship between the growth parameters and Doppler broadening parameters. Incorporating Bi into GaSb decreases the vacancy concentration in the epitaxial layers compared to the sample with no Bi in the epitaxial layer.

GaSbBi

GaSb

Doppler broadening

defect

vacancy

positron annihilation spectroscopy

Author

N. Segercrantz

Aalto University

J. Kujala

Aalto University

F. Tuomisto

Aalto University

J. Slotte

Aalto University

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

AIP Conference Proceedings

0094-243X (ISSN) 1551-7616 (eISSN)

Vol. 1583 174-177

2014 IEEE International Conference on Automation Science and Engineering, CASE 2014
Taipei, Taiwan,

Subject Categories

Atom and Molecular Physics and Optics

Other Materials Engineering

Condensed Matter Physics

DOI

10.1063/1.4865629

More information

Latest update

11/12/2019