Defect studies in MBE grown GaSb1-x Bi x layers
Paper i proceeding, 2014

Positron annihilation spectroscopy in Doppler broadening mode is used to study epitaxial layers of GaSb 1-x Bi x on undoped GaSb. The samples were grown by Molecular Beam Epitaxy at different temperatures and with different Bi/Sb beam equivalent pressure ratios resulting in Bi concentrations of 0-0.7 %. The results show a relationship between the growth parameters and Doppler broadening parameters. Incorporating Bi into GaSb decreases the vacancy concentration in the epitaxial layers compared to the sample with no Bi in the epitaxial layer.

GaSbBi

GaSb

Doppler broadening

defect

vacancy

positron annihilation spectroscopy

Författare

N. Segercrantz

Aalto-Yliopisto

J. Kujala

Aalto-Yliopisto

F. Tuomisto

Aalto-Yliopisto

J. Slotte

Aalto-Yliopisto

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

AIP Conference Proceedings

0094-243X (ISSN) 1551-7616 (eISSN)

Vol. 1583 174-177

2014 IEEE International Conference on Automation Science and Engineering, CASE 2014
Taipei, Taiwan,

Ämneskategorier

Atom- och molekylfysik och optik

Annan materialteknik

Den kondenserade materiens fysik

DOI

10.1063/1.4865629

Mer information

Senast uppdaterat

2019-11-12