Effect of buffer design on structural and electrical properties of InAs films grown on GaAs substrates
Paper in proceedings, 2014

Different buffer structures were grown by molecular beam epitaxy (MBE) to accommodate the large lattice mismatch of InAs with GaAs substrate. A novel graded digital superlattice (GDSL) buffer design was proposed and compared with the common one-step buffer and linear alloy graded (LAG) buffer designs. Effect of buffer structures on structural and electrical properties of the InAs films was investigated. High quality InAs films were obtained on GaAs substrates.

InAs films

superlatice

MBE

Author

Huan Zhao Ternehäll

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Likun Aai

Zonghe Lai

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

the 41st international symposium on compound semiconductors, Montepillier, France

Areas of Advance

Information and Communication Technology

Materials Science

Subject Categories

Materials Engineering

Infrastructure

Nanofabrication Laboratory

More information

Created

10/7/2017