Effect of buffer design on structural and electrical properties of InAs films grown on GaAs substrates
Paper i proceeding, 2014

Different buffer structures were grown by molecular beam epitaxy (MBE) to accommodate the large lattice mismatch of InAs with GaAs substrate. A novel graded digital superlattice (GDSL) buffer design was proposed and compared with the common one-step buffer and linear alloy graded (LAG) buffer designs. Effect of buffer structures on structural and electrical properties of the InAs films was investigated. High quality InAs films were obtained on GaAs substrates.

InAs films

superlatice

MBE

Författare

Huan Zhao Ternehäll

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Likun Aai

Zonghe Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

the 41st international symposium on compound semiconductors, Montepillier, France

Styrkeområden

Informations- och kommunikationsteknik

Materialvetenskap

Ämneskategorier

Materialteknik

Infrastruktur

Nanotekniklaboratoriet

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Skapat

2017-10-07