Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates
Journal article, 2009

We investigate the effects of doping and grading slope on the surface and structure of linearly alloy graded InGaAs buffers. It is found that the Be doping can improve material properties, resulting in smaller surface roughness and a lower threading dislocation density, while the Si doping has an opposite effect. The effect is strongly dependent on the grading slope. A moderate In grading slope is preferable for the strain relaxation and the minimization of the negative effect of Si doping. Physical mechanisms are proposed to explain the experimental observations. Since doping is essential for many types of optoelectronic devices, these results are valuable for improving the material properties and performance of metamorphic devices.

surface morphology

Metamorphic

dislocation

MBE

GaAs

doping

Author

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Ivar Tångring

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Zonghe Lai

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 106 12 123531-

Subject Categories

Materials Engineering

Physical Sciences

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1063/1.3273492

More information

Created

10/6/2017