Ivar Tångring

A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy

Metamorphic InGaAs telecom lasers on GaAs

Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates

Doping influence on structural property of linearly graded composition InGaAs buffer layer grown by MBE

Influence of Doping on Structural Properties of Graded InGaAs Layers Grown by MBE

Metamorphic Heterostructures and Lasers on GaAs

Low Threshold Current Density 1.3 µm Metamorphic InGaAs/GaAs Quantum Well Laser Diodes

InGaAs quantum-well lasers provide alternative to 1.55 mu m GaAs-based lasers

Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs

MBE Growth of a 1.58 µm InGaAs Quantum Well Lasers on GaAs

Improvement of structural and optical quality of metamorphic InGaAs/InAlGaAs quantum wells by Be-doping

Metamorphic growth of 1.25 – 1.29 µm InGaAs quantum well lasers by molecular beam epitaxy

Manipulation of strain relaxation in metamorphic heterostructures

1.58 µm InGaAs quantum well laser on GaAs

Metamorphic Growth of 1.25-1.29 μm InGaAs Quantum Well Lasers by Molecular Beam Epitaxy

Design and Characterization of 1.3-1.6 µm Metamorphic Materials and Lasers on GaAs

Telecom wavelength metamorphic InGaAs quantum well lasers grown on GaAs by molecular beam epitaxy

1.27 µm Metamorphic InGaAs Quantum Well Lasers on GaAs Substrates.

Strong 1.3 µm Light emission from Metamorphic InGaAs Quantum Wells on GaAs grown by Molecular Beam Epitaxy

Strong 1.3-1.6 µm Light Emission from Metamorphic InGaAs Quantum Wells on GaAs

Strong 1.3--1.6 µm light emission from metamorphic InGaAs quantum wells on GaAs

Optimization of 1.3 µm metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy