Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs
Paper in proceedings, 2008

We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser emitting in the 1.55 ?m range. Different techniques to suppress roughening while maintaining low threading dislocation densities are evaluated. Finally, we demonstrate a 50×1250 ?m 2 broad area FabryPerot laser that produces pulsed lasing with a threshold current density of 490 A/cm2 and a wavelength of 1.58 ?m at room temperature.

Author

Ivar Tångring

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

H. Q. Ni

Chinese Academy of Sciences

B. P. Wu

Chinese Academy of Sciences

D. H. Wu

Chinese Academy of Sciences

Y. H. Xiong

Chinese Academy of Sciences

S. S. Huang

Chinese Academy of Sciences

Zhichuan Niu

Chinese Academy of Sciences

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

10928669 (ISSN)

4702982

Subject Categories

Materials Engineering

DOI

10.1109/ICIPRM.2008.4702982

ISBN

978-142442259-3

More information

Latest update

10/2/2018