Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs
Paper in proceeding, 2008
We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser emitting in the 1.55 ?m range. Different techniques to suppress roughening while maintaining low threading dislocation densities are evaluated. Finally, we demonstrate a 50×1250 ?m 2 broad area FabryPerot laser that produces pulsed lasing with a threshold current density of 490 A/cm2 and a wavelength of 1.58 ?m at room temperature.
Author
Ivar Tångring
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
H. Q. Ni
Chinese Academy of Sciences
B. P. Wu
Chinese Academy of Sciences
D. H. Wu
Chinese Academy of Sciences
Y. H. Xiong
Chinese Academy of Sciences
S. S. Huang
Chinese Academy of Sciences
Zhichuan Niu
Chinese Academy of Sciences
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
10928669 (ISSN)
4702982978-142442259-3 (ISBN)
Subject Categories
Materials Engineering
DOI
10.1109/ICIPRM.2008.4702982
ISBN
978-142442259-3