Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs
Paper i proceeding, 2008

We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser emitting in the 1.55 ?m range. Different techniques to suppress roughening while maintaining low threading dislocation densities are evaluated. Finally, we demonstrate a 50×1250 ?m 2 broad area FabryPerot laser that produces pulsed lasing with a threshold current density of 490 A/cm2 and a wavelength of 1.58 ?m at room temperature.

Författare

Ivar Tångring

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

H. Q. Ni

Institute of Semiconductors Chinese Academy of Sciences

B. P. Wu

Institute of Semiconductors Chinese Academy of Sciences

D. H. Wu

Institute of Semiconductors Chinese Academy of Sciences

Y. H. Xiong

Institute of Semiconductors Chinese Academy of Sciences

S. S. Huang

Institute of Semiconductors Chinese Academy of Sciences

Zhichuan Niu

Institute of Semiconductors Chinese Academy of Sciences

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

10928669 (ISSN)

4702982

Ämneskategorier

Materialteknik

DOI

10.1109/ICIPRM.2008.4702982

ISBN

978-142442259-3