Ivar Tångring

Visar 22 publikationer

2009

Metamorphic InGaAs telecom lasers on GaAs

Ivar Tångring, Yuxin Song, D.H. Wu et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. Proc. SPIE 7230, p. 723003-
Paper i proceeding
2009

Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates

Yuxin Song, Shu Min Wang, Ivar Tångring et al
Journal of Applied Physics. Vol. 106 (12), p. 123531-
Artikel i vetenskaplig tidskrift
2009

Doping influence on structural property of linearly graded composition InGaAs buffer layer grown by MBE

Yuxin Song, Shu Min Wang, Ivar Tångring et al
15th European Molecular Beam Epitaxy Workshop, p. TuP11-
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2009

A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy

Ivar Tångring, Yuxin Song, Zonghe Lai et al
Journal of Crystal Growth. Vol. 311, p. 1684-
Artikel i vetenskaplig tidskrift
2008

Metamorphic Heterostructures and Lasers on GaAs

Ivar Tångring
Doktorsavhandling
2008

Influence of Doping on Structural Properties of Graded InGaAs Layers Grown by MBE

Ivar Tångring, Yuxin Song, Shu Min Wang et al
15th International Conference on Molecular Beam Epitaxy
Paper i proceeding
2008

Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs

Ivar Tångring, Shu Min Wang, Anders Larsson et al
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Paper i proceeding
2008

InGaAs quantum-well lasers provide alternative to 1.55 mu m GaAs-based lasers

Ivar Tångring
Laser Focus World. Vol. 44 (1), p. 15-
Artikel i övriga tidskrifter
2008

MBE Growth of a 1.58 µm InGaAs Quantum Well Lasers on GaAs

Ivar Tångring, Shu Min Wang, Anders Larsson
Indium Phosphide and Related Material Conference 2008
Paper i proceeding
2008

Low Threshold Current Density 1.3 µm Metamorphic InGaAs/GaAs Quantum Well Laser Diodes

D.H. Wu, Haili Wang, B.P. Wu et al
Electron. Lett.. Vol. 44, p. 474-
Artikel i vetenskaplig tidskrift
2007

Metamorphic growth of 1.25 – 1.29 µm InGaAs quantum well lasers by molecular beam epitaxy

Ivar Tångring, Shu Min Wang, Zonghe Lai et al
Journal of Crystal Growth. Vol. 301 (SPEC. ISS.), p. 971-974
Artikel i vetenskaplig tidskrift
2007

1.58 µm InGaAs quantum well laser on GaAs

Ivar Tångring, Shu Min Wang, Anders Larsson et al
Applied Physics Letters. Vol. 91, p. 221101-
Artikel i vetenskaplig tidskrift
2007

Improvement of structural and optical quality of metamorphic InGaAs/InAlGaAs quantum wells by Be-doping

Ivar Tångring, Mahdad Sadeghi, Shu Min Wang et al
14th European Molecular Beam Epitaxy Workshop, Sierra Nevada, Spain, 2007.
Poster (konferens)
2007

Manipulation of strain relaxation in metamorphic heterostructures

Ivar Tångring, Zonghe Lai, Shu Min Wang et al
Applied Physics Letters. Vol. 90, p. 071904-
Artikel i vetenskaplig tidskrift
2006

Telecom wavelength metamorphic InGaAs quantum well lasers grown on GaAs by molecular beam epitaxy

Ivar Tångring
WOCSDICE 2006 abstract book
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2006

1.27 µm Metamorphic InGaAs Quantum Well Lasers on GaAs Substrates.

Ivar Tångring
Electronics Letters. Vol. 42 (12), p. 691-693
Artikel i vetenskaplig tidskrift
2006

Metamorphic Growth of 1.25-1.29 μm InGaAs Quantum Well Lasers by Molecular Beam Epitaxy

Ivar Tångring
MBE2006 Tokyo Abstract Workbook
Poster (konferens)
2005

Strong 1.3 µm Light emission from Metamorphic InGaAs Quantum Wells on GaAs grown by Molecular Beam Epitaxy

Ivar Tångring
13th European Molecular Beam Epitaxy Workshop, p. 84-85
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2005

Strong 1.3-1.6 µm Light Emission from Metamorphic InGaAs Quantum Wells on GaAs

Shu Min Wang, Ivar Tångring, Qinfen Gu et al
3rd International Conference on Materials for Advanced Technologies
Paper i proceeding
2005

Optimization of 1.3 µm metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

Ivar Tångring
Journal of Crystal Growth. Vol. 281 (2-4), p. 220-226
Artikel i vetenskaplig tidskrift
2005

Strong 1.3--1.6 µm light emission from metamorphic InGaAs quantum wells on GaAs

Ivar Tångring
Applied Physics Letters. Vol. 86, p. 171902-
Artikel i vetenskaplig tidskrift

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