Ivar Tångring
Visar 22 publikationer
Metamorphic InGaAs telecom lasers on GaAs
Influence of Doping on Structural Properties of Graded InGaAs Layers Grown by MBE
Low Threshold Current Density 1.3 µm Metamorphic InGaAs/GaAs Quantum Well Laser Diodes
InGaAs quantum-well lasers provide alternative to 1.55 mu m GaAs-based lasers
Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs
MBE Growth of a 1.58 µm InGaAs Quantum Well Lasers on GaAs
Metamorphic growth of 1.25 – 1.29 µm InGaAs quantum well lasers by molecular beam epitaxy
Manipulation of strain relaxation in metamorphic heterostructures
1.58 µm InGaAs quantum well laser on GaAs
Metamorphic Growth of 1.25-1.29 μm InGaAs Quantum Well Lasers by Molecular Beam Epitaxy
Design and Characterization of 1.3-1.6 µm Metamorphic Materials and Lasers on GaAs
Telecom wavelength metamorphic InGaAs quantum well lasers grown on GaAs by molecular beam epitaxy
1.27 µm Metamorphic InGaAs Quantum Well Lasers on GaAs Substrates.
Strong 1.3-1.6 µm Light Emission from Metamorphic InGaAs Quantum Wells on GaAs
Strong 1.3--1.6 µm light emission from metamorphic InGaAs quantum wells on GaAs
Optimization of 1.3 µm metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy
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