Metamorphic InGaAs telecom lasers on GaAs
Paper i proceeding, 2009

We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy. The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, as well as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocation dynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstrate pulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.

Metamorphic

telecom laser

compositionally graded buffer layer

InGaAs

molecular beam epitaxy

quantum well

GaAs

Författare

Ivar Tångring

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

D.H. Wu

Institute of Semiconductors Chinese Academy of Sciences

Z.C. Niu

Institute of Semiconductors Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN)

Vol. Proc. SPIE 7230 723003- 723003

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1117/12.808787

ISBN

978-0-8194-7476-6