Metamorphic growth of 1.25 – 1.29 µm InGaAs quantum well lasers by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2007

We demonstrate 1.25–1.29 μm metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE) using an alloy-graded buffer layer (GBL). Use of Be in the GBL is effective to reduce surface/interface roughness and improves optical quality. The RMS surface roughness of the optimized metamorphic laser is only two atomic monolayers for 1×1 μm2. Cross-sectional transmission electron microscopy (TEM) images confirm that most dislocations are blocked in the GBL. Ridge waveguide lasers with 4 μm wide ridge were fabricated and characterized. The average threshold current under the pulsed excitation is in 170–200 mA for a cavity length of 0.9–1.5 mm. This value can be further reduced to about 100 mA by high-reflectivity coating. Lasers can work in an ambient temperature up to at least 50 °C.

Författare

Ivar Tångring

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Zonghe Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Journal of Crystal Growth

0022-0248 (ISSN)

Vol. 301 SPEC. ISS. 971-974

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1016/j.jcrysgro.2006.11.171

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Skapat

2017-10-08