1.58 µm InGaAs quantum well laser on GaAs
Artikel i vetenskaplig tidskrift, 2007

We demonstrate the 1.58 µm emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 µm2 broad area laser, a minimum threshold current density of 490 A/cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 µm GaAs-based lasers.

Författare

Ivar Tångring

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Zonghe Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

H. Q. Ni

B.P. Wu

D.H. Wu

Y.H. Xiong

S.S. Huang

Z.C. Niu

Applied Physics Letters

Vol. 91 221101-

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2017-10-07